Aluminum Nitride substrate material with its excellent ability to dissipate heat up to 200 W/mK, is the answer to the present trend
toward miniaturization of high power microelectronic circuits and other high thermal hazard-free applications.
Valley has in stock AlN substrates and AlN wafers with thermal conductivity of 175 W/mK and 200 W/mK to meet
a variety of specification requirements.
